C3M0032120J1 Silicon Carbide Power MOSFET

CREE

Description

VDS 1200 V C3M0032120J1 ID @ 25˚C 68 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0032120J1
Manufacturer: CREE
File Size: 958.45 KB
Datasheet: C3M0032120J1-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7)
* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch Part Number C3M0032120J1 P

C3M0032120J1 Distributors

📁 Related Datasheet

C3M0032120J2 C3M0032120K1 C3M0015065D C3M0015065K C3M0016120D C3M0016120K

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C3M0032120J1 Silicon Carbide Power MOSFET CREE

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