C3M0060065D Silicon Carbide Power MOSFET

CREE

Description

VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0060065D
Manufacturer: CREE
File Size: 1.04 MB
Datasheet: C3M0060065D-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd Generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher syste

Applications

* EV charging
* Server power supplies
* Solar PV inverters
* UPS
* DC/DC converters Part Number C3M0060065D Package TO-247-3 Marking C3M0060065D Maximum Ratings Symbol Parameter VDSS VGS ID Drain - Source Voltage, TC = 25 ˚C Gate - Source voltage (Unde

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C3M0060065J C3M0060065K C3M0060065L C3M0060075K1 C3M0065090D C3M0065090J

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C3M0060065D Silicon Carbide Power MOSFET CREE

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