C3M0021120K Silicon Carbide Power MOSFET

CREE

Description

VDS 1200 V C3M0021120K ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode.

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Datasheet Specifications

Part number: C3M0021120K
Manufacturer: CREE
File Size: 919.18 KB
Datasheet: C3M0021120K-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch TAB Drain 1 234 D SSG Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Part Number C3M0021120K Package TO

C3M0021120K Distributors

📁 Related Datasheet

C3M0021120K1 C3M0021120D C3M0021120J2 C3M0025065D C3M0025065J1 C3M0025065K

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C3M0021120K Silicon Carbide Power MOSFET CREE

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