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C3M0021120J2 - Silicon Carbide Power MOSFET

Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • Larger drain tab for better thermal performance.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system effic.

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Full PDF Text Transcription

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C3M0021120J2 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters Tab Drain 1234567 Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Numb
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