C3M0032120D Silicon Carbide Power MOSFET

CREE

Description

VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0032120D
Manufacturer: CREE
File Size: 786.19 KB
Datasheet: C3M0032120D-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Re

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies Part Number Package Marking C3M0032120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) TO 247-3 C3M0032120D Symbol Parameter Value Unit Test

C3M0032120D Distributors

📁 Related Datasheet

C3M0032120J1 C3M0032120J2 C3M0032120K1 C3M0015065D C3M0015065K C3M0016120D

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C3M0032120D Silicon Carbide Power MOSFET CREE

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