C3M0060065K Silicon Carbide Power MOSFET

CREE

Description

VDS C3M0060065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0060065K
Manufacturer: CREE
File Size: 1.25 MB
Datasheet: C3M0060065K-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package 650 V 37 A 60 mΩ
* 3rd Generation SiC MOSFET technology TAB Drain
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant

Applications

* EV charging
* Server power supplies
* Solar PV inverters
* UPS
* DC/DC converters 1 234 D SSG Part Number C3M0060065K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Package TO-247-4 Power Source (Pin 2) Marking C3M0060065K Maximum Ratings Symbol

C3M0060065K Distributors

📁 Related Datasheet

C3M0060065D C3M0060065J C3M0060065L C3M0060075K1 C3M0065090D C3M0065090J

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C3M0060065K Silicon Carbide Power MOSFET CREE

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