C3M0065100J Silicon Carbide Power MOSFET

CREE

Description

VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0065100J
Manufacturer: CREE
File Size: 0.98 MB
Datasheet: C3M0065100J-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* C3MTM SiC MOSFET technology TAB
* Low parasitic inductance with separate driver source pin Drain
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recove

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies 1234567 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number Package Marking C3M0065100J TO-263-7 C3M006

C3M0065100J Distributors

📁 Related Datasheet

C3M0065100K C3M0065090D C3M0065090J C3M0060065D C3M0060065J C3M0060065K

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C3M0065100J Silicon Carbide Power MOSFET CREE

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