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C3M0065100J Silicon Carbide Power MOSFET

C3M0065100J Description

VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

C3M0065100J Features

* Package
* C3MTM SiC MOSFET technology TAB
* Low parasitic inductance with separate driver source pin Drain
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recove

C3M0065100J Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies 1234567 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number Package Marking C3M0065100J TO-263-7 C3M006

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Datasheet Details

Part number
C3M0065100J
Manufacturer
CREE
File Size
0.98 MB
Datasheet
C3M0065100J-CREE.pdf
Description
Silicon Carbide Power MOSFET

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