C3M0065100K Silicon Carbide Power MOSFET

Cree

Description

VDS 1000 V C3M0065100K ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0065100K
Manufacturer: Cree
File Size: 968.41 KB
Datasheet: C3M0065100K-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* New C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Part Number C3M0065100K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO-247-4 Marking C3M0065100K Maximum Ratings (TC =

C3M0065100K Distributors

📁 Related Datasheet

C3M0065100J C3M0065090D C3M0065090J C3M0060065D C3M0060065J C3M0060065K

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C3M0065100K Silicon Carbide Power MOSFET Cree

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