C3M0045065K Silicon Carbide Power MOSFET

Cree

C3M0045065K Description

VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Fea.

C3M0045065K Features

* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

C3M0045065K Applications

* EV chargers
* Server & Telecom PSU
* UPS
* Solar inverters
* SMPS
* DC/DC converters Part Number C3M0045065K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO 247-4 Marking C3M0045065K Maximum Ratings Symbo

📥 Download Datasheet

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Datasheet Details

Part number: C3M0045065K
Manufacturer: Cree
File Size: 1.05 MB
Datasheet: C3M0045065K-Cree.pdf
Description: Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET Cree

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