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C3M0065090J Silicon Carbide Power MOSFET

C3M0065090J Description

C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe.

C3M0065090J Features

* New C3M SiC MOSFET technology
* New low impedance package with driver source pin
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)
* Low output capacitance (60pF)
* Halogen free, RoHS compliant

C3M0065090J Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Package TAB Drain 1 2 34 5 6 7 G DS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number C3M0065090J Package TO-

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Datasheet Details

Part number
C3M0065090J
Manufacturer
Cree
File Size
928.94 KB
Datasheet
C3M0065090J-Cree.pdf
Description
Silicon Carbide Power MOSFET

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