C3M0040120D Silicon Carbide Power MOSFET

Cree

Description

VDS 1200 V C3M0040120D ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0040120D
Manufacturer: Cree
File Size: 851.76 KB
Datasheet: C3M0040120D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Reduce s

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies Part Number C3M0040120D Package TO 247-3 Marking C3M0040120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions

C3M0040120D Distributors

📁 Related Datasheet

C3M0040120J1 C3M0040120J2 C3M0040120K C3M0040120K1 C3M0045065D C3M0045065J1

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C3M0040120D Silicon Carbide Power MOSFET Cree

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