C3M0120065K Silicon Carbide Power MOSFET

Cree

Description

VDS 650 V C3M0120065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 22 A 120 mΩ N-Channel Enhancement Mode Fe.

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Datasheet Specifications

Part number: C3M0120065K
Manufacturer: Cree
File Size: 1.02 MB
Datasheet: C3M0120065K-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* Solar inverters
* DC/DC converters
* Switch Mode Power Supplies
* EV battery chargers
* UPS Part Number C3M0120065K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO-247-4 Marking C3M0120065K Maximum Ratings Symbol

C3M0120065K Distributors

📁 Related Datasheet

C3M0120065D C3M0120065J C3M0120065L C3M0120090D C3M0120090J C3M0120100J

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C3M0120065K Silicon Carbide Power MOSFET Cree

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