C3M0120100J Silicon Carbide Power MOSFET

CREE

Description

VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode.

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Datasheet Specifications

Part number: C3M0120100J
Manufacturer: CREE
File Size: 777.92 KB
Datasheet: C3M0120100J-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* C3MTM SiC MOSFET technology
* Low parasitic inductance with separate driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Part Number C3M0120100J Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package TO-263-7 Mark

C3M0120100J Distributors

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C3M0120100J Silicon Carbide Power MOSFET CREE

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