C3M0120100K Silicon Carbide Power MOSFET

CREE

Description

VDS 1000 V C3M0120100K ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0120100K
Manufacturer: CREE
File Size: 923.37 KB
Datasheet: C3M0120100K-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Part Number C3M0120100K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO 247-4 Marking C3M0120100K Maximum Ratings (TC =

C3M0120100K Distributors

📁 Related Datasheet

C3M0120065D C3M0120065J C3M0120065K C3M0120065L C3M0120090D C3M0120090J

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C3M0120100K Silicon Carbide Power MOSFET CREE

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