C3M0021120D Silicon Carbide Power MOSFET

CREE

Description

VDS 1200 V C3M0021120D ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode.

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Datasheet Specifications

Part number: C3M0021120D
Manufacturer: CREE
File Size: 800.04 KB
Datasheet: C3M0021120D-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Red

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch Part Number Package Marking C3M0021120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) TO 247-3 C3M0021120D Symbol Paramete

C3M0021120D Distributors

📁 Related Datasheet

C3M0021120J2 C3M0021120K C3M0021120K1 C3M0025065D C3M0025065J1 C3M0025065K

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C3M0021120D Silicon Carbide Power MOSFET CREE

CREE C3M0021120D-like datasheet