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C3M0030090K Silicon Carbide Power MOSFET

C3M0030090K Description

VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 mΩ N-Channel Enhancement Mode .

C3M0030090K Features

* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

C3M0030090K Applications

* Solar inverters
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Part Number C3M0030090K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO 247-4 Marking C3M0030090K Maximum Ratings (TC = 25

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Datasheet Details

Part number
C3M0030090K
Manufacturer
CREE
File Size
1.04 MB
Datasheet
C3M0030090K-CREE.pdf
Description
Silicon Carbide Power MOSFET

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