C3M0120065J Silicon Carbide Power MOSFET

Wolfspeed

C3M0120065J Description

C3M0120065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) .

C3M0120065J Features

* 3rd Generation SiC MOSFET technology
* Low inductance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diod

C3M0120065J Applications

* Solar inverters
* DC/DC converters
* Switch Mode Power Supplies
* EV battery chargers
* UPS Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased power density
* Increased system switching frequency

📥 Download Datasheet

C3M0120065J Datasheet Preview — Preview of C3M0120065J PDF

Datasheet Details

Part number: C3M0120065J
Manufacturer: Wolfspeed
File Size: 756.39 KB
Datasheet: C3M0120065J-Wolfspeed.pdf
Description: Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET Wolfspeed

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