C3M0120065D Silicon Carbide Power MOSFET

Cree

Description

VDS 650 V C3M0120065D ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0120065D
Manufacturer: Cree
File Size: 922.84 KB
Datasheet: C3M0120065D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd Generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher syste

Applications

* Solar inverters
* DC/DC converters
* Switch Mode Power Supplies
* EV battery chargers
* UPS Part Number C3M0120065D Package TO-247-3 Marking C3M0120065D Maximum Ratings Symbol Parameter VDSS VGS ID ID(pulse) PD TJ , Tstg TL Md Drain - Source Voltage,

C3M0120065D Distributors

📁 Related Datasheet

C3M0120065J C3M0120065L C3M0120090D C3M0120090J C3M0120100J C3M0120100K

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C3M0120065D Silicon Carbide Power MOSFET Cree

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