C3M0060065J Silicon Carbide Power MOSFET

Wolfspeed

Description

C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) .

📥 Download Datasheet

C3M0060065J Datasheet Preview — Preview of C3M0060065J PDF

Datasheet Specifications

Part number: C3M0060065J
Manufacturer: Wolfspeed
File Size: 819.09 KB
Datasheet: C3M0060065J-Wolfspeed.pdf
Description: Silicon Carbide Power MOSFET

Features

* 3rd Generation SiC MOSFET technology
* Low inductance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diod

Applications

* EV charging
* Server power supplies
* Solar PV inverters
* UPS
* DC/DC converters Ordering Part Number C3M0060065J Package TO-263-7 Marking C3M0060065J Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased

C3M0060065J Distributors

📁 Related Datasheet

C3M0065090J C3M0065100J C3M0065100K C3M0016120D C3M0016120K C3M0021120D

📌 All Tags

C3M0060065J Silicon Carbide Power MOSFET Wolfspeed

Wolfspeed C3M0060065J-like datasheet