C3M0060065J Silicon Carbide Power MOSFET

Wolfspeed

C3M0060065J Description

C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) .

C3M0060065J Features

* 3rd Generation SiC MOSFET technology
* Low inductance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diod

C3M0060065J Applications

* EV charging
* Server power supplies
* Solar PV inverters
* UPS
* DC/DC converters Ordering Part Number C3M0060065J Package TO-263-7 Marking C3M0060065J Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased

📥 Download Datasheet

C3M0060065J Datasheet Preview — Preview of C3M0060065J PDF

Datasheet Details

Part number: C3M0060065J
Manufacturer: Wolfspeed
File Size: 819.09 KB
Datasheet: C3M0060065J-Wolfspeed.pdf
Description: Silicon Carbide Power MOSFET

📁 Related Datasheet

C3M0065100J - Silicon Carbide Power MOSFET (CREE)
C3M0065100K - Silicon Carbide Power MOSFET (Cree)
C3M0016120D - Silicon Carbide Power MOSFET (CREE)
C3M0016120K - Silicon Carbide Power MOSFET (CREE)
C3M0021120D - Silicon Carbide Power MOSFET (CREE)
C3M0021120K - Silicon Carbide Power MOSFET (CREE)
C3M0030090K - Silicon Carbide Power MOSFET (CREE)
C3M0032120D - Silicon Carbide Power MOSFET (CREE)

📌 All Tags

Silicon Carbide Power MOSFET Wolfspeed

Wolfspeed C3M0060065J-like datasheet

C3M0060065D - Silicon Carbide Power MOSFET
C3M0060065K - Silicon Carbide Power MOSFET
C3M0060065L - Silicon Carbide Power MOSFET
C3M0060075K1 - Silicon Carbide Power MOSFET
C3M0065090D - Silicon Carbide Power MOSFET
C3M0065090J - Silicon Carbide Power MOSFET