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GT50NR21 Silicon N-Channel IGBT

GT50NR21 Description

Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Applications Note.

GT50NR21 Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ. ) (IC = 50 A) FWD : trr = 0.50 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ. ) (IC = 50 A

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Silicon N-Channel IGBT Toshiba
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