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GT50N324 Datasheet - Toshiba

GT50N324 silicon N-channel IGBT

GT50N324 Features

* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ.) (IC = 60 A) FRD trr = 0.8 µs (typ.) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N3

GT50N324 Datasheet (555.73 KB)

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Datasheet Details

Part number:

GT50N324

Manufacturer:

Toshiba ↗

File Size:

555.73 KB

Description:

Silicon n-channel igbt.

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GT50N324 silicon N-channel IGBT Toshiba

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