Datasheet Specifications
- Part number
- GT50N324
- Manufacturer
- Toshiba ↗
- File Size
- 555.73 KB
- Datasheet
- GT50N324-Toshiba.pdf
- Description
- silicon N-channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT50N324 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Applications Note: The produ.
Features
* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ. ) (IC = 60 A) FRD trr = 0.8 µs (typ. ) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N3GT50N324 Distributors
📁 Related Datasheet
📌 All Tags