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GT50J121 silicon N-channel IGBT

GT50J121 Description

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications .

GT50J121 Applications

* Fast Switching Applications
* The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference)
* High speed: tf = 0.05 µs (typ. )
* Low switching loss : Eon = 1.30 mJ (typ. ) : Eoff = 1.34 mJ (typ. )
* Low saturati

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silicon N-channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT50J121-like datasheet