Datasheet Specifications
- Part number
- GT50J322
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 609.99 KB
- Datasheet
- GT50J322_ToshibaSemiconductor.pdf
- Description
- silicon N-channel IGBT
Description
GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.
Applications
* Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ. ) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ. ) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT CollectorGT50J322 Distributors
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