Datasheet Specifications
- Part number
- GT50JR22
- Manufacturer
- Toshiba ↗
- File Size
- 201.59 KB
- Datasheet
- GT50JR22-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1.Applications * Dedicated to Current-Resonant Inverter Switching Applications Note.
Features
* (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ. ) (IC = 50 A) FWD : trr = 0.35 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ. ) (ICGT50JR22 Distributors
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