Datasheet4U Logo Datasheet4U.com

GT50J123 Silicon N-Channel IGBT

GT50J123 Description

Discrete IGBTs Silicon N-Channel IGBT GT50J123 1.Applications * Hard Switching * High-Speed Switching * Power Factor Correcti.

GT50J123 Features

* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1

GT50J123 Applications

* Hard Switching
* High-Speed Switching

📥 Download Datasheet

Preview of GT50J123 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GT50J121 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J122 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J301 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J322 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J325 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT50J327 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J328 - Silicon N-Channel IGBT (Toshiba Semiconductor)

📌 All Tags

Silicon N-Channel IGBT Toshiba
Toshiba GT50J123-like datasheet