Datasheet Specifications
- Part number
- GT50J301
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 415.52 KB
- Datasheet
- GT50J301_ToshibaSemiconductor.pdf
- Description
- silicon N-channel IGBT
Description
GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.
Applications
* MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30μs (Max. ) z Low saturation voltage : VCE (sat) = 2.7V (Max. ) z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT CoGT50J301 Distributors
📁 Related Datasheet
📌 All Tags