Datasheet Specifications
- Part number
- GT50J327
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 184.67 KB
- Datasheet
- GT50J327_ToshibaSemiconductor.pdf
- Description
- silicon N-channel IGBT
Description
www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Applicat.
Applications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to imGT50J327 Distributors
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