GT50J325 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Uni.

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Datasheet Specifications

Part number: GT50J325
Manufacturer: Toshiba ↗ Semiconductor
File Size: 222.46 KB
Datasheet: GT50J325_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Fast Switching Applications Unit: mm
* Fourth generation IGBT
* Enhancement mode type
* Fast switching (FS): Operating frequency up to 50 kHz (reference)
* High speed: tf = 0.05 μs (typ. )
* Low switching loss: Eon = 1.30 mJ (typ. ) : Eoff = 1.34 mJ (typ. )

GT50J325 Distributors

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GT50J325 Silicon N-Channel IGBT Toshiba Semiconductor

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