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GT50N321 Datasheet - Toshiba Semiconductor

GT50N321 silicon N-channel IGBT

GT50N321 NIGBT GT50N321 ○ ○ 4 FRD 。 。 。 IGBT : tf = 0.25 μs () (IC = 60 A) FRD : trr = 0.8 μs () (di/dt = 20 A/μs) 。 VCE (sat) = 2.5 V () (IC = 60 A) : mm (Ta = 25°C) V V A ･ ･ DC 1 ms DC 1 ms VCES VGES IC ICP IF IFP PC Tj Tstg 1000 ±25 50 120 15 120 156 150 55~150 A W °C °C JEDEC JEITA ― ― 2-16C1C (Tc = 25°C) : 4.6 g () : (//) 、 ( /、 ) 、 。 () (、) 、。 TOSHI.

GT50N321 Datasheet (245.71 KB)

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Datasheet Details

Part number:

GT50N321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

245.71 KB

Description:

Silicon n-channel igbt.

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GT50N321 silicon N-channel IGBT Toshiba Semiconductor

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