GT50N322A Datasheet - Toshiba Semiconductor

GT50N322A Silicon N-Channel IGBT

GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = 20 A/μs) Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-e.

GT50N322A Datasheet (138.32 KB)