GT50G321 silicon N-channel IGBT

Toshiba Semiconductor

Description

GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applicatio.

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Datasheet Specifications

Part number: GT50G321
Manufacturer: Toshiba ↗ Semiconductor
File Size: 147.25 KB
Datasheet: GT50G321_ToshibaSemiconductor.pdf
Description: silicon N-channel IGBT

Applications

* Unit: mm
* FRD included between emitter and collector
* Enhancement-mode
* High speed: tf = 0.30 µs (typ. ) (IC = 60 A)
* Low saturation voltage: VCE (sat) = 1.8 V (typ. ) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Coll

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GT50G321 silicon N-channel IGBT Toshiba Semiconductor

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