SSM3J332R Datasheet - Toshiba Semiconductor

SSM3J332R, Silicon P-Channel MOSFET

SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch

Applications

* 1.8-V drive
* Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drai

SSM3J332R-ToshibaSemiconductor.pdf