SSM3J352F Datasheet - Toshiba

SSM3J352F, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J352F 1.

Features

* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment S-Mini SSM3J352F 1: Gate 2: Source 3: Drain

SSM3J352F-Toshiba.pdf