SSM3J356R Datasheet - Toshiba

SSM3J356R, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J356R 1.

Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Internal Circuit SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4. Order

SSM3J356R-Toshiba.pdf