SSM3J351R Datasheet - Toshiba

SSM3J351R, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J351R 1.

Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V drive (3) Low drain-source on-resistance : RDS(ON) = 107 mΩ (typ. ) (VGS = -10 V) RDS(ON) = 122 mΩ (typ. ) (VGS = -4.5 V) RDS(ON) = 129 mΩ (typ. ) (VGS = -4.0 V) 3. Packaging and Internal Circuit SSM3J351R 1: Gate 2: Source 3:

SSM3J351R-Toshiba.pdf