SSM3J358R Datasheet - Toshiba

SSM3J358R, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS SSM3J358R 1.

Features

* (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V) 3. Packaging and Pin Assignment SOT-23F SSM3J358

SSM3J358R-Toshiba.pdf