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SSM3J331R - Silicon P-Channel MOSFET

SSM3J331R Description

MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1.Applications * Power Management Switches 2..

SSM3J331R Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SOT-23F SSM3J331R 1. Gate 2. Source 3. Drai

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Silicon P-Channel MOSFET Toshiba Semiconductor
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