SSM3J340R Datasheet - Toshiba

SSM3J340R, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J340R 1.

Features

* (1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment SOT-23F SSM3J340R 1: Gate 2: Source 3: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corpora

SSM3J340R-Toshiba.pdf