Datasheet4U Logo Datasheet4U.com

SSM3J338R - Silicon P-Channel MOSFET

Features

  • (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2025-02-20 Rev.3.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics.

📥 Download Datasheet

Datasheet Details

Part number SSM3J338R
Manufacturer Toshiba
File Size 423.72 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J338R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSM3J331R Silicon P-Channel MOSFET Toshiba Semiconductor
SSM3J332R Silicon P-Channel MOSFET Toshiba Semiconductor
SSM3J334R Silicon P-Channel MOSFET Toshiba Semiconductor
SSM3J304T Silicon P-Channel MOSFET Toshiba Semiconductor
SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
SSM3J326T Silicon P-Channel MOSFET
SSM3J340R Silicon P-Channel MOSFET
SSM3J351R Silicon P-Channel MOSFET
SSM3J352F Silicon P-Channel MOSFET
SSM3J355R Silicon P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2025-02-20 Rev.3.0 SSM3J338R 4.
Published: |