SSM3J352F
Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V)
3. Packaging and Pin Assignment
S-Mini
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2015-12
2016-12-19 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -20 V
Gate-source voltage
VGSS
±12
Drain current (DC) Drain current (pulsed)
(Note 1) (Note 1), (Note 2)
ID IDP
-2 A -4
Power dissipation
(Note 3)
600 m W
Power dissipation t≤1s
(Note 3)
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g....
