SSM3J356R
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V)
3. Packaging and Internal Circuit
1: Gate 2: Source 3: Drain
SOT-23F
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF
- YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
©2016-2024
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-09
2024-07-23 Rev.9.0
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-60
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note...
