SSM3J304T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
○ Power Management Switch Applications ○ High-Speed Switching Applications
- 1.8-V drive
- Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain-source voltage
-20
Gate-source voltage
VGSS
±8
Drain current
Pulse
-2.3 A
-4.6
Power dissipation
PD (Note 1)
700 m W
Channel temperature
Tch
°C
Storage temperature
Tstg
- 55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application...
