SSM3J306T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Power management switch Applications
- 4 V drive
- Low ON-resistance:
Ron = 225 mΩ (max) (@VGS =
- 4 V) Ron = 117 mΩ (max) (@VGS =
- 10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain- source voltage
- 30
Gate- source voltage
VGSS
± 20
Drain current
Pulse
- 2.4 A
- 4.8
Drain power dissipation
PD (Note 1)
700 m W
Channel temperature
Tch
°C
Storage temperature range
Tstg
- 55 to...
