SSM3J355R
Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V)
3. Packaging and Internal Circuit
SOT-23F
1: Gate 2: Source 3: Drain
©2016-2025
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-11
2025-02-20 Rev.4.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-20
VGSS
±10
Drain current (DC)
(Note 1)
-6
Drain current (pulsed)
(Note 1), (Note 2)
-24
Power dissipation
(Note 3)
Power dissipation
(t = 10 s)
(Note...
