SSM3J305T
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TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
High-Speed Switching Applications
- - 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS =
- 4 V) Ron = 237 mΩ (max) (@VGS =
- 10 V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain- source voltage Gate- source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating
- 30 ± 20
- 1.7
- 3.4 700 150
- 55 to 150 Unit V V A m W °C °C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating...
