Datasheet Specifications
- Part number
- GT45F123
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 241.66 KB
- Datasheet
- GT45F123-ToshibaSemiconductor.pdf
- Description
- Insulated Gate Bipolar Transistor
Description
GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications * * * *
Applications
* 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ. ) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltGT45F123 Distributors
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