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GT45F123 Datasheet - Toshiba Semiconductor

GT45F123 Insulated Gate Bipolar Transistor

GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature .

GT45F123 Datasheet (241.66 KB)

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Datasheet Details

Part number:

GT45F123

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

241.66 KB

Description:

Insulated gate bipolar transistor.

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GT45F123 Insulated Gate Bipolar Transistor Toshiba Semiconductor

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