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STB4410 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S.

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Datasheet Details

Part number STB4410
Manufacturer SamHop Microelectronics
File Size 185.43 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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STB4410 STP4410Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 75A 7.0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 100 ±20 ID Drain Current-Continuous c TC=25°C TC=70°C 75 63 IDM -Pulsed a c 390 EAS Avalanche Energy d 576 TC=25°C PD Maximum Power Dissipation TC=70°C 75 52.
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