• Part: STB438S
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 133.00 KB
Download STB438S Datasheet PDF
SamHop Microelectronics
STB438S
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. GS S TB S E R IE S T O -263(DD-P AK ) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 40 ±20 Drain Current-Continuous a TA=25°C TA=70°C 60 50 IDM -Pulsed b EAS Avalanche Energy c 240 196 Maximum Power Dissipation a TA=25°C TA=70°C 70 45 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 50 Units V V A A A m J W W °C °C/W °C/W Feb,05,2009 1 .samhop..tw STB/P43...