STB438A - N-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Features
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D
GS S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220.
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STB/P438AGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
8.5 @ VGS=10V 40V 60A
11 @ VGS=4.5V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
40 ±20
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
60 48
IDM -Pulsed b EAS Single Pulse Avalanche Energy d
177 196
PD
Maximum Power Dissipation a
TC=25°C TC=70°C
62.
STB438A Datasheet
