STB438A
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
GS S TB S E R IE S T O -263(DD-P AK )
S TP S E R IE S TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
40 ±20
Drain Current-Continuous a
TC=25°C
TC=70°C
60 48
IDM -Pulsed b EAS Single Pulse Avalanche Energy d
177 196
Maximum Power Dissipation a
TC=25°C TC=70°C
62.5 40
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
2 50
Units V V A A A m J W W
°C
°C/W °C/W
Aug,02,2010
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