• Part: STB434S
  • Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 244.75 KB
Download STB434S Datasheet PDF
SamHop Microelectronics
STB434S
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. 60A R DS(ON) (m Ω) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V STP SERIES TO-220 STB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 ±20 TC=25°C TC=70°C 60 48 176 91 TC=25°C TC=70°C 62.5 40 -55 to 150 Units V V A A A m J W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 2 62.5 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Nov,14,2008 .samhop..tw .. STB/P434S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 u A n A OFF...